Home
Login
Cart
HomeProductsDiscrete SemiconductorsTransistorsMOSFETsMOSFETs, SingleIPA50R280IPA50R280CEXKSA2

IPA50R280CEXKSA2

Infineon THT Power MOSFET N-Channel 18,1A 30W 280mOhm  TO-220 Fullpak

Image similar
NEW
Manufacturer Part No.
IPA50R280CEXKSA2
Schukat Part No.
IPA50R280CEXKSA2
Manufacturer
Infineon
Enter your company's part number here. Your part number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.
Enter your personal project number here to assign the item to a project. Your part project number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.

300 Pcs. in stock

Planned delivery time
Ø 15 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available (from stock)
Replacement / Follow-up View entire series
Data Sheet
Open PDF
ECAD Model
Downloads

Prices

Manufacturer bundle 50 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 1 or multiple of 1)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
18,1 A
18,1 A
(Pd) Power Dissipation
30 W
(RDS(on)) Drain-Source Resistance Max.
280 mOhm 
Manufacturer Package
TO-220 Fullpak
RoHS-Conform

Specifications

Open all

General

Manufacturer
  • Infineon
Type
  • Power MOSFET
Series
  • IPA50R280
Product group
  • U8312
Packaging
  • Tube
Assembly Type
  • THT
Manufacturer Package
  • TO-220 Fullpak

Operating conditions

Sperrschichttemperatur, min. (TJ)
  • -40 °C
Sperrschichttemperatur, max. (TJ)
  • 150 °C
Storage Temperature Min.
  • -40 °C
Storage Temperature Max.
  • 150 °C

Electrical Properties

(Uds) Max. Drain-Source Voltage Q1
  • 500 V
(Uds) Max. Drain-Source Voltage
  • 500 V
  • 500 V
(Id) Continuous Drain Current Q1
  • 18.1 A
(Id) Continuous Drain Current
  • 18,1 A
  • 18,1 A
(Ugs) Gate-Source Voltage Q1
  • 20 V V
(Ugs) Gate-Source Voltage
  • 20 V
  • 20 V
(Ugs th) Gate-Source Threshold Voltage Q1
  • 3 V
(Ugs th) Gate-Source Threshold Voltage
  • 3 V
  • 3 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 30 W
(RDS(on)) Drain-Source Resistance Max.
  • 280 mOhm 
(Qg) Gate Charge Q1
  • 32.6 nC
(Qg) Gate Charge
  • 32,6 nC
  • 32,6 nC