IKW50N65ET7XKSA1
Infineon IGBT 650V 80A 273 W TO-247
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0 Pcs. in stock
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240 Pcs.
240 Pcs.
Planned delivery time
Ø 99 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available on order
Data Sheet
ECAD Model
Prices
Manufacturer bundle 30 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 240 or multiple of 240)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- (Uces) Max. Collector-Emitter Breakdown Voltage
- 650 V
- (IC) Collector Current
- 80 A
- (Pd) Power Dissipation
- 273 W
- (td(on)) Turn-On Delay Time
- 26 ns
- (td(off)) Turn-Off Delay Time
- 350 ns
- Manufacturer Package
- TO-247
- RoHS-Conform
Specifications
Open all
Operating conditions
- Operating Temperature Min.
- -40 °C
- Operating Temperature Max.
- 175 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 150 °C
Electrical properties
- (IC) Collector Current
- 80 A
- (Pd) Power Dissipation
- 273 W
- (Uces) Max. Collector-Emitter Breakdown Voltage
- 650 V
- (ICpuls) Pulsed Collector Current
- 150 A
- (td(on)) Turn-On Delay Time
- 26 ns
- (td(off)) Turn-Off Delay Time
- 350 ns
- (UGE(th)) Gate Emitter ThresholdVoltage
- 5 V
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