IKP08N65F5XKSA1

Infineon IGBT 650V 18A 70 W TO-220

IKP08N65F5XKSA1
Manufacturer Part No.
IKP08N65F5XKSA1
Schukat Part No.
IKP08N65F5XKSA1
Manufacturer
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Item no longer available!

Planned delivery time
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Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
EOL 27.06.2025
Article discontinued
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 50 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 500 or multiple of 500)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

(Uces) Max. Collector-Emitter Breakdown Voltage
650 V
(IC) Collector Current
18 A
(Pd) Power Dissipation
70 W
(td(on)) Turn-On Delay Time
10 ns
(td(off)) Turn-Off Delay Time
116 ns
Manufacturer Package
TO-220
RoHS-Conform

Specifications

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General

Manufacturer
  • Infineon
Type
  • IGBT
Series
  • IKP08N
Product group
  • U4344
  • U4344
Packaging
  • Tube
Assembly Type
  • THT
Pin Count
  • 3
Manufacturer Package
  • TO-220

Operating conditions

Barrier Layer temperature, min. (TJ)
  • -40 °C
Barrier Layer Temperature, max. (TJ)
  • 175 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical Properties

(IC) Collector Current
  • 18 A
(Pd) Power Dissipation
  • 70 W
(Uces) Max. Collector-Emitter Breakdown Voltage
  • 650 V
(ICpuls) Pulsed Collector Current
  • 24 A
(td(on)) Turn-On Delay Time
  • 10 ns
(td(off)) Turn-Off Delay Time
  • 116 ns
(UGE(th)) Gate Emitter ThresholdVoltage
  • 4 V