IKB30N65ES5ATMA1

Infineon IGBT 650V 30A 188 W TO-263 (D2PAK)

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Manufacturer Part No.
IKB30N65ES5ATMA1
Schukat Part No.
IKB30N65ES5ATMA1
Manufacturer
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0 Pcs. in stock

Planned delivery time
Ø 60 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available on order
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 1000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 1000 or multiple of 1000)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

(Uces) Max. Collector-Emitter Breakdown Voltage
650 V
(IC) Collector Current
30 A
(Pd) Power Dissipation
188 W
(td(on)) Turn-On Delay Time
17 ns
(td(off)) Turn-Off Delay Time
124 ns
Manufacturer Package
TO-263 (D2PAK)
RoHS-Conform

Specifications

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General

Manufacturer
  • Infineon
Type
  • IGBT
Series
  • IKB30N65
Product group
  • U4728 INFINEON SMD IGBTs taped IGB_, IKB_ D²Pak
Packaging
  • Reel
Assembly Type
  • SMD/SMT
Pin Count
  • 3
Manufacturer Package
  • TO-263 (D2PAK)

Operating conditions

Operating Temperature Min.
  • -40 °C
Operating Temperature Max.
  • 175 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical properties

(IC) Collector Current
  • 30 A
(Pd) Power Dissipation
  • 188 W
(Uces) Max. Collector-Emitter Breakdown Voltage
  • 650 V
(ICpuls) Pulsed Collector Current
  • 120 A
(td(on)) Turn-On Delay Time
  • 17 ns
(td(off)) Turn-Off Delay Time
  • 124 ns
(UGE(th)) Gate Emitter ThresholdVoltage
  • 4 V