IGB20N60H3ATMA1

Infineon IGBT 600V 40A TO-263 (D2PAK)

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Manufacturer Part No.
IGB20N60H3ATMA1
Schukat Part No.
IGB20N60H3
Manufacturer
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0 Pcs. in stock

Planned delivery time
Ø 50 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available on order
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 1000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 1000 or multiple of 1000)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

(Uces) Max. Collector-Emitter Breakdown Voltage
600 V
(IC) Collector Current
40 A
(td(on)) Turn-On Delay Time
18 ns
(td(off)) Turn-Off Delay Time
207 ns
Manufacturer Package
TO-263 (D2PAK)
RoHS-Conform

Specifications

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General

Manufacturer
  • Infineon
Type
  • IGBT
Series
  • IGB20N
Product group
  • U4728 INFINEON SMD IGBTs taped IGB_, IKB_ D²Pak
Packaging
  • Reel
Assembly Type
  • SMD/SMT
Pin Count
  • 3
Manufacturer Package
  • TO-263 (D2PAK)
Configuration
  • Single

Operating conditions

Operating Temperature Min.
  • -40 °C
Operating Temperature Max.
  • 175 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical properties

(IC) Collector Current
  • 40 A
(Uces) Max. Collector-Emitter Breakdown Voltage
  • 600 V
(ICpuls) Pulsed Collector Current
  • 80 A
(td(on)) Turn-On Delay Time
  • 18 ns
(td(off)) Turn-Off Delay Time
  • 207 ns
(UGE(th)) Gate Emitter ThresholdVoltage
  • 5.1 V