IDW30G65C5XKSA1
Infineon THT SiC Schottky Diode 1,7V 30000mA 165000mA TO-247
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0 Pcs. in stock
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240 Pcs.
240 Pcs.
Planned delivery time
Ø 12 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available on order
Data Sheet
ECAD Model
Prices
Manufacturer bundle 30 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 240 or multiple of 240)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- (Uf) Forward Voltage
- 1.7 V
- (If) Forward Current
- 30,000 mA
- Peak Let-Through Surrent Max.
- 165,000 mA
- (Urrm) Peak Recurrent Reverse Voltage Max.
- 650 V
- (Ir) Reverse Current
- 220,000 nA
- RoHS-Conform
Specifications
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Operating conditions
- Operating Temperature Min.
- -55 °C
- Operating Temperature Max.
- 175 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 175 °C
Electrical properties
- (Uf) Forward Voltage
- 1.7 V
- (If) Forward Current
- 30,000 mA
- Peak Let-Through Surrent Max.
- 165,000 mA
- (Urrm) Peak Recurrent Reverse Voltage Max.
- 650 V
- (Ir) Reverse Current
- 220,000 nA
- (Cd) Diode Capacitance
- 860 pF