IDH10G120C5XKSA1
Infineon THT SiC Schottky Diode 1,8V 10000mA 99000mA TO-220AC
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150 Pcs. in stock
Planned delivery time
Ø 12 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available (from stock)
Data Sheet
ECAD Model
Prices
Manufacturer bundle 50 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 5 or multiple of 5)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- (Uf) Forward Voltage
- 1.8 V
- (If) Forward Current
- 10,000 mA
- Peak Let-Through Surrent Max.
- 99,000 mA
- (Urrm) Peak Recurrent Reverse Voltage Max.
- 1,200 V
- (Ir) Reverse Current
- 62,000 nA
- RoHS-Conform
Specifications
Open all
Operating conditions
- Operating Temperature Min.
- -55 °C
- Operating Temperature Max.
- 175 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 150 °C
Electrical properties
- (Uf) Forward Voltage
- 1.8 V
- (If) Forward Current
- 10,000 mA
- Peak Let-Through Surrent Max.
- 99,000 mA
- (Urrm) Peak Recurrent Reverse Voltage Max.
- 1,200 V
- (Ir) Reverse Current
- 62,000 nA
- (Cd) Diode Capacitance
- 525 pF