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(RDS(on)) Drain-Source Resistance Max.
(RDS(on)) Drain-Source Resistanc ...
(RDS(on)) Drain-Source Resistance Max.
(Uds) Max. Drain-Source Voltage
(Uds) Max. Drain-Source Voltage
(Id) Continuous Drain Current
(Id) Continuous Drain Current
(Pd) Power Dissipation
(Pd) Power Dissipation
(Ugs) Gate-Source Voltage
(Ugs) Gate-Source Voltage
(Ugs th) Gate-Source Threshold Voltage
(Ugs th) Gate-Source Threshold Vo ...
(Ugs th) Gate-Source Threshold Voltage
(Qg) Gate Charge
(Qg) Gate Charge
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Qualification
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Packaging
Barrier Layer temperature, min. (TJ)
Barrier Layer temperature, min. (TJ)
Barrier Layer Temperature, max. (TJ)
Barrier Layer Temperature, max. (TJ)
Results (1003)
RoHS compliant
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| Show Selected | Image | Part No. | Indiv. Part No. | Manufacturer | Price | Availability | Quantity | Series | Data Sheet | RoHS | Type | Manufacturer | Polarity | Number of Channels | Assembly Type | Manufacturer Package | (RDS(on)) Drain-Source Resistance Max. | (Uds) Max. Drain-Source Voltage | (Id) Continuous Drain Current | (Pd) Power Dissipation | (Ugs) Gate-Source Voltage | (Ugs th) Gate-Source Threshold Voltage | (Qg) Gate Charge | Qualification | Packaging | Barrier Layer temperature, min. (TJ) | Barrier Layer Temperature, max. (TJ) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1001 |  | Manufacturers Part No. SUD50P10-43L-GE3(SUD50P10-43L-GE3) Vishay SMD/SMT Power MOSFET P-Channel 36,4A 113,6W 43mOhm TO-252 | Customer Part No. Customer Project No. | 1.300 Pcs. Planned Delivery Time Ø 60 Weeks Available (from stock) | (at least 50 or mul. of 50) | Power MOSFET | Vishay | P-Channel | 1.0 | SMD/SMT | TO-252 | 43.0 mOhm | -100 V | 36,4 A | 113.6 W | 20 V | -3 V | 54 nC | Reel | -55.0 °C | 150.0 °C | ||||||
1002 | | Manufacturers Part No. SUD23N06-31-GE3(SUD23N06-31-GE3) Vishay SMD/SMT Power MOSFET N-Channel 21,4A 31,25W 31mOhm TO-252 | Customer Part No. Customer Project No. | 1.650 Pcs. Planned Delivery Time Ø 8 Weeks Available (from stock) | (at least 50 or mul. of 50) | Power MOSFET | Vishay | N-Channel | 1.0 | SMD/SMT | TO-252 | 31.0 mOhm | 60 V | 21,4 A | 31.25 W | 20 V | 3 V | 6,5 nC | Reel | -55.0 °C | 150.0 °C | ||||||
1003 | EOL | Customer Part No. Customer Project No. | No longer available | (at least 5 or mul. of 5) | 1.0 | 0.14 mOhm | 70 V | 10 A | 50.0 W |
