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(RDS(on)) Drain-Source Resistance Max.
(RDS(on)) Drain-Source Resistanc ...
(RDS(on)) Drain-Source Resistance Max.
(Uds) Max. Drain-Source Voltage
(Uds) Max. Drain-Source Voltage
(Id) Continuous Drain Current
(Id) Continuous Drain Current
(Pd) Power Dissipation
(Pd) Power Dissipation
(Ugs) Gate-Source Voltage
(Ugs) Gate-Source Voltage
(Ugs th) Gate-Source Threshold Voltage
(Ugs th) Gate-Source Threshold Vo ...
(Ugs th) Gate-Source Threshold Voltage
(Qg) Gate Charge
(Qg) Gate Charge
Qualification
Qualification
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Barrier Layer temperature, min. (TJ)
Barrier Layer temperature, min. (TJ)
Barrier Layer Temperature, max. (TJ)
Barrier Layer Temperature, max. (TJ)
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| Show Selected | Image | Part No. | Indiv. Part No. | Manufacturer | Price | Availability | Quantity | Series | Data Sheet | RoHS | Type | Manufacturer | Polarity | Number of Channels | Assembly Type | Manufacturer Package | (RDS(on)) Drain-Source Resistance Max. | (Uds) Max. Drain-Source Voltage | (Id) Continuous Drain Current | (Pd) Power Dissipation | (Ugs) Gate-Source Voltage | (Ugs th) Gate-Source Threshold Voltage | (Qg) Gate Charge | Qualification | Packaging | Barrier Layer temperature, min. (TJ) | Barrier Layer Temperature, max. (TJ) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1001 |  NRND | Manufacturers Part No. TSM2323CX(TSM2323CX) Taiwan Semiconductor SMD/SMT Power MOSFET P-Channel -4,7A 1,25W 68mOhm SOT-23 | Customer Part No. Customer Project No. | 3.500 Pcs. Planned Delivery Time Ø 99 Weeks Not Recommended for New Designs | (at least 100 or mul. of 100) | Power MOSFET | Taiwan Semiconductor | P-Channel | 1.0 | SMD/SMT | SOT-23 | 68.0 mOhm | -20 V | -4,7 A | 1.25 W | 8 V | 12,5 nC | Reel | -55.0 °C | 150.0 °C | |||||||
1002 | NRND | Manufacturers Part No. TSM2328CX(TSM2328CX) Taiwan Semiconductor SMD/SMT Power MOSFET N-Channel 1,5A 1,38W 250mOhm SOT-23 | Customer Part No. Customer Project No. | 2.500 Pcs. Planned Delivery Time Ø 99 Weeks Not Recommended for New Designs | (at least 100 or mul. of 100) | Power MOSFET | Taiwan Semiconductor | N-Channel | 1.0 | SMD/SMT | SOT-23 | 250.0 mOhm | 100 V | 1,5 A | 1.38 W | 20 V | 11,1 nC | Reel | 150.0 °C | ||||||||
1003 | NRND | Manufacturers Part No. TSM120N06LCR RLG(TSM120N06LCR) Taiwan Semiconductor SMD/SMT Power MOSFET N-Channel 54A 69W 15mOhm PDFN56-8 | Customer Part No. Customer Project No. | 3.300 Pcs. Planned Delivery Time Ø 26 Weeks Not Recommended for New Designs | (at least 25 or mul. of 25) | Power MOSFET | Taiwan Semiconductor | N-Channel | 1.0 | SMD/SMT | PDFN56-8 | 15.0 mOhm | 60 V | 54 A | 69.0 W | 20 V | 18 nC | Reel | -55.0 °C | 150.0 °C |
